| PART |
Description |
Maker |
| MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F |
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36锛?low-Through ZBT SRAM(16Mb娴??寮??姝ラ?????ㄥ?)
|
Micron Technology, Inc.
|
| CY7C1355C-100AXC CY7C1355C-100BGXC CY7C1355C-133AX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL??Architecture
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS8322Z72C-225T GS8322Z72GC-225T GS8322Z18B-225IT |
512K X 72 ZBT SRAM, 7 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209
512K X 72 ZBT SRAM, 7 ns, PBGA209 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-209
2M X 18 ZBT SRAM, 7 ns, PBGA119
|
GSI Technology, Inc.
|
| IS61NLF25636A-7.5B2I-TR IS61NLF51218A-7.5B3I-TR IS |
256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 6.5 ns, PQFP100
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| CY7C1371C-117BGI CY7C1371C-117BZC CY7C1371C-117BGC |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 7.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IS61NVVP51236-200BI IS61NVVP51236-250B IS61NVVP512 |
256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 3 ns, PBGA119
256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 2.6 ns, PBGA119
|
Integrated Silicon Solution, Inc.
|
| CY7C1372BV25-133BZC |
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 4.2 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| GS8162Z72AC-225T GS8162Z72AGC-275T GS8162Z72AGC-22 |
256K X 72 ZBT SRAM, 6 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209
256K X 72 ZBT SRAM, 5.25 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209
512K X 36 ZBT SRAM, 6 ns, PBGA119
|
GSI Technology, Inc.
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| K7N321831C K7N323631C-QI160 K7N323631C-EC160 K7N32 |
1Mx36 & 2Mx18 Pipelined NtRAM
1M X 36 ZBT SRAM, 3.5 ns, PQFP100
1M X 36 ZBT SRAM, 3.5 ns, PBGA165
1M X 36 ZBT SRAM, 2.6 ns, PQFP100
|
Samsung semiconductor
|
| GS8162Z18BB-200IV GS8162Z18BB-150IV GS8162Z18BGB-2 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 6.5 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 6.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 7.5 ns, PBGA119
|
GSI Technology, Inc.
|
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